Dynamic Void Growth and Shrinkage in Mg under Electron Irradiation
نویسندگان
چکیده
منابع مشابه
Silicon nanocrystal growth under irradiation of electron beam
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was in...
متن کاملVoid nucleation at elevated temperatures under cascade-damage irradiation
The effects on void nucleation of fluctuations respectively due to the randomness of point-defect migratory jumps, the random generation of free point defects in discrete packages, and the fluctuating rate of vacancy emission from voids are considered. It was found that effects of the cascade-induced fluctuations are significant only at sufficiently high total sink strength. At lower sink stren...
متن کاملDislocation Loop Formation and Growth under In Situ Laser and/or Electron Irradiation
Vacancies and interstitial atoms are primary lattice (point) defects that cause observable microstructural changes, such as the formation of dislocation loops and voids in crystalline solids. These defects' diffusion properties determine the phase stability and environmental resistibility of macroscopic materials under ambient conditions. Although in situ methods have been proposed for measurin...
متن کاملVoid growth in 6061-aluminum alloy under triaxial stress state
In numerous metals and alloys, ductile fracture involves void nucleation, growth, and coalescence. In this contribution, void growth has been quantitatively characterized in an extruded 6061-wrought Al-alloy as a function of stress state in notch tensile test specimens. Digital image analysis and Stereology have been used to estimate the volume fraction and three-dimensional number density of v...
متن کاملElectron imaging of dielectrics under simultaneous electron–ion irradiation
We demonstrate that if charging caused by electron irradiation of an insulator is controlled by a defocused flux of soft-landing positive ions, secondary electron ~SE! images can contain contrast due to lateral variations in ~i! changes in the SE yield caused by subsurface trapped charge and ~ii! the SE-ion recombination rate. Both contrast mechanisms can provide information on microscopic vari...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Research Letters
سال: 2014
ISSN: 2166-3831
DOI: 10.1080/21663831.2014.904826